产品介绍

Main Product Characteristics

V(BR)DSS	600V
RDS(ON)	1.9Ω(typ.)
I_D	4A

Features and Benefits

▪ Turbo HV MOSFET process technology.

▪ Low on-resistance and low gate charge.

▪ Outstanding lightning characteristics.

▪ Fast switching and reverse body recovery.

▪ High ruggedness and robustness.

Description

The TP series products utilizes Tengxin’s turbo HV MOSFET techniques to achieve ultral low on- resistance and low gate charge. These features make this series products extremely efficient and reliable for use in power management, lighting, adapter and a wide variety of other applications.

Absolute Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter		Symbol	Max.	Unit
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±30	V
Continuous Drain Current	TC = 25°C	ID	5	A
Continuous Drain Current	TC = 100°C	ID	3.1	A
Pulsed Drain Current1		IDM	20	A
Single Pulsed Avalanche Energy2		EAS	242	mJ
Power Dissipation	TC = 25°C	PD	40	W
Thermal Resistance, Junction to Case		RθJC	3.2	°C/W
Thermal Resistance, Junction to Ambient		RθJA	120	°C/W
Operating and Storage Temperature Range		TJ, TSTG	-55 to +150	°C

Electrical Characteristics (T_C=25°C unless otherwise specified)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Off Characteristic
Drain-Source Breakdown Voltage	V(BR)DSS	VGS= 0V, ID= 250μA	600	-	-	V
Zero Gate Voltage Drain Current	IDSS	V_DS= 600V, VGS= 0V, TJ= 25°C	-	-	1	μA
Gate to Body Leakage Current	IGSS	VGS= ±30V	-	-	±100	nA
On Characteristics
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID= 250μA	2	-	4	V
Static Drain-Source On-Resistance3	RDS(on)	VGS= 10V, ID= 1A	-	1.9	2.5	Ω
Dynamic Characteristics
Input Capacitance	Ciss	VDS= 25V, VGS= 0V, f= 1.0MHz	-	479.8	-	pF
Output Capacitance	Coss		-	62.7	-	pF
Reverse Transfer Capacitance	Crss		-	2.1	-	pF
Total Gate Charge	Qg	VDD= 480V, ID= 2A, VGS= 10V	-	9.67	-	nC
Gate-Source Charge	Qgs		-	2.74	-	nC
Gate-Drain(“Miller”) Charge	Qgd		-	3.39	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VDD= 300V, ID= 2A, RG= 25Ω,V_GS=10V	-	14.8	-	nS
Turn-On Rise Time	tr		-	28.4	-	nS
Turn-Off Delay Time	td(off)		-	38.3	-	nS
Turn-Off Fall Time	tf		-	21.1	-	nS
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward Current	IS		-	-	5	A
Maximum Pulsed Drain to Source Diode Forward Current	ISM		-	-	20	A
Drain to Source Diode Forward Voltage	VSD	V_GS= 0V, I_SD= 2A, TJ= 25°C	-	-	1.4	V
Reverse Recovery Time	trr	VGS= 0V, IS= 2A, di/dt= 100A/μS	-	399	-	nS
Reverse Recovery Charge	Qrr	VGS= 0V, IS= 2A, di/dt= 100A/μS	-	2.2	-	μC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3.78A, L=30mH,VDD = 70V, RG = 25Ω, Starting TJ = 25°C

3. Pulse Test: Pulse width ≤ 300μS, Duty Cycle ≤ 1%

Typical Electrical and Thermal Characteristic Curves

Test Circuit & Waveform

Package Outline Dimensions TO-220F

Symbol	Dimension In Millimeters			Dimension In Inches
Symbol	Min	Nom	Max	Min	Nom	Max
E	9.960	10.160	10.360	0.392	0.400	0.408
E1	9.840	10.040	10.240	0.387	0.395	0.403
E2	6.800	7.000	7.200	0.268	0.276	0.283
A	4.600	4.700	4.800	0.181	0.185	0.189
A1	2.440	2.540	2.640	0.096	0.100	0.104
A2	2.660	2.760	2.860	0.105	0.109	0.113
A3	0.600	0.700	0.800	0.024	0.028	0.031
c	-	0.500	-	-	0.020	-
D	15.780	15.870	15.980	0.621	0.625	0.629
D1	8.970	9.170	9.370	0.353	0.361	0.369
H1	6.500	6.700	6.800	0.256	0.264	0.268
e	2.54BSC			0.10BSC
ФP	3.080	3.180	3.280	0.121	0.125	0.129
ФP1	1.400	1.500	1.600	0.055	0.059	0.063
ФP2	0.900	1.000	1.100	0.035	0.039	0.043
ФP3	0.100	0.200	0.300	0.004	0.008	0.012
L	12.780	12.980	13.180	0.503	0.511	0.519
L1	2.970	3.170	3.370	0.117	0.125	0.133
L2	0.830	0.930	1.030	0.033	0.037	0.041
Q1	3o	5o	7o	3o	5o	7o
Q2	43^o	45^o	47^o	43^o	45^o	47^o
b1	1.180	1.280	1.380	0.046	0.050	0.054
b2	0.760	0.800	0.840	0.030	0.031	0.033
b3	-	-	1.420	-	-	0.056